A High-Power Lateral p-i-n Silicon-Germanium Photodiode
Author:
Affiliation:
1. Xi’an Institute of Optics and Precision Mechanics Chinese Academy of Sciences,State Key Laboratory of Transient Optics and Photonics,Xi’an,China,710119
Funder
Research and Development
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10616250/10617814/10618558.pdf?arnumber=10618558
Reference7 articles.
1. High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz
2. High-speed Si-Ge avalanche photodiodes
3. 100-Gbps RZ Data Reception in 67-GHz Si-Contacted Germanium Waveguide p-i-n Photodetectors
4. High-speed and high-power germanium photodetector with a lateral silicon nitride waveguide
5. High-speed lateral PIN germanium photodetector with 4-directional light input
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