A Study of Sub-40nm FinFET BE-SONOS NAND Flash-Reference-Cited by-同舟云学术

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A Study of Sub-40nm FinFET BE-SONOS NAND Flash

Published:2008 Issue: Volume: Page:
ISSN:
Container-title:2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design
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Author:

Hsu Tzu-Hsuan,Lue Hang-Ting,Peng Wu-Chin,Tsai Cheng-Hung,King Ya-Chin,Wang Szu-Yu,Wu Ming-Tsung,Hong Shih-Ping,Hsieh Jung-Yu,Yang Ling-Wu,Lian Nan-Tzu,Yang Tahone,Chen Kuang-Chao,Hsieh Kuang-Yeu,Liu Rich,Lu Chih-Yuan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4531799/4531800/04531839.pdf?arnumber=4531839

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Enhancement by Optimization of Poly Grain Size and Channel Thickness in a Vertical Channel 3-D NAND Flash Memory;IEEE Transactions on Electron Devices;2018-05

2. Technical Solutions to Mitigate Reliability Challenges due to Technology Scaling of Charge Storage NVM;Journal of Nanomaterials;2013

3. Effects of channel doping concentration and fin dimension variation on self-boosting of channel potential in NAND-type SONOS flash memory array based on bulk-FinFETs;Current Applied Physics;2010-07

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