Mechanism of Threshold Switching in Chalcogenide Phase Change Memory Devices-Reference-Cited by-同舟云学术

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Mechanism of Threshold Switching in Chalcogenide Phase Change Memory Devices

Published:2007 Issue: Volume: Page:
ISSN:
Container-title:2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop
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Author:

Karpov I.,Savransky S.,Karpov V.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4290552/4290553/04290579.pdf?arnumber=4290579

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of resistive switching mechanisms for memristive neuromorphic devices*;Chinese Physics B;2020-09-01

2. Phase-change memory: A continuous multilevel compact model of subthreshold conduction and threshold switching;Japanese Journal of Applied Physics;2018-03-16

3. The gradual nature of threshold switching;New Journal of Physics;2014-11-19

4. Material engineering of GexTe100−x compounds to improve phase-change memory performances;Solid-State Electronics;2013-11

5. Modeling of SET seasoning effects in Phase Change Memory arrays;Microelectronics Reliability;2012-06

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