High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs-Reference-Cited by-同舟云学术

High-Speed Pseudo-CMOS Circuits Using Bulk Accumulation a-IGZO TFTs

Published:2015-02 Issue:2 Volume:36 Page:153-155
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chen Yuanfeng,Geng Di,Mativenga Mallory,Nam Hyoungsik,Jang Jin

Funder

IndustrialStrategic Technology Development Program (10045269, Development of Soluble TFT and Pixel Formation Materials/Process Technologies for AMOLED TV) funded by MOTIE/KEIT

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7019014/06994792.pdf?arnumber=6994792

Cited by 50 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Sub-μm Gate-All-Around-Like Amorphous-InGaZnO Transistors With Record-High f_T of 2.09 GHz;IEEE Transactions on Electron Devices;2024-08

2. Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors;physica status solidi (b);2024-04-15

3. A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs;IEEE Journal of the Electron Devices Society;2024

4. Large Size and High Resolution Organic Light Emitting Diodes Based on the In-Ga-Zn-O Thin Film Transistors with a Coplanar Structure;Korean Journal of Materials Research;2023-12-27

5. Enhancing photodetection performance of UV photodetectors with stacked Pt/NiO dual capping layers on IGZO thin-film transistors;AIP Advances;2023-07-01