Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

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Effect of Self-Heating on the Drain Current Transient Response in AlGaN/GaN HEMTs

Published:2014-03 Issue:3 Volume:35 Page:345-347
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhang Yamin,Feng Shiwei,Zhu Hui,Guo Chunsheng,Deng Bing,Zhang Guangchen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6746036/06730690.pdf?arnumber=6730690

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cryogenic Overcurrent Characteristic of GaN HEMT and Converter Evaluation;IEEE Transactions on Industry Applications;2024-07

2. Automatic in-situ measurement of thermal resistance for GaN HEMTs;Microelectronics Journal;2024-07

3. In-Circuit Assessment of the Long-Term Reliability of E-Mode GaN HEMTs;IEEE Transactions on Electron Devices;2023-11

4. A numerical calibration of structure-function transient thermal measurement based on Cauer RC network;Microelectronics Journal;2023-05

5. Active Thermal Management of GaN-on-SiC HEMT With Embedded Microfluidic Cooling;IEEE Transactions on Electron Devices;2022-10

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