Characterization of TLC 3D-NAND Flash Endurance through Machine Learning for LDPC Code Rate Optimization-Reference-Cited by-同舟云学术

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Characterization of TLC 3D-NAND Flash Endurance through Machine Learning for LDPC Code Rate Optimization

Published:2017-05 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Memory Workshop (IMW)
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Author:

Zambelli Cristian,Cancelliere Giuseppe,Riguzzi Fabrizio,Lamma Evelina,Olivo Piero,Marelli Alessia,Micheloni Rino

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7938567/7939058/07939074.pdf?arnumber=7939074

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Computational Storage for 3D NAND Flash Error Recovery Flow Prediction;Lecture Notes in Electrical Engineering;2023-11-29

2. Accurate SPICE Model for Cells With Tube-Type Poly-Si Channel in Cell Strings of Vertical NAND Flash Memory;IEEE Transactions on Electron Devices;2023-10

3. Integrated Progressive Built-In Self-Repair (IPBISR) Techniques for NAND Flash Memory;2023 IEEE International Test Conference in Asia (ITC-Asia);2023-09-12

4. E3C Techniques for Protecting NAND Flash Memories;Journal of Electronic Testing;2023-07-01

5. Enhancement of ISPP Efficiency Using Neural Network-Based Optimization of 3-D NAND Cell;IEEE Transactions on Electron Devices;2023-07

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