The Ultimate Step to Predict Yield Impact from Mask by Litho Printability Review-Reference-Cited by-同舟云学术

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The Ultimate Step to Predict Yield Impact from Mask by Litho Printability Review

Published:2023-10-26 Issue: Volume: Page:1-4
ISSN:
Container-title:2023 International Workshop on Advanced Patterning Solutions (IWAPS)
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Author:

Lo Ching Shu¹,Yu Da Quan²,Ren Maohua³,Chang Chin Kuei⁴

Affiliation:

1. School of Electronic Science and Engineering, Xiamen University; Fab Operations Division United Semiconductor (Xiamen) Co.,Ltd,Xiamen,China

2. School of Electronic Science and Engineering, Xiamen University,Xiamen,China

3. Fab Operations Division United Semiconductor (Xiamen) Co.,Ltd,Xiamen,China

4. Mask Engineering Services United Semiconductor (Xiamen) Co.,Ltd,Xiamen,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10365714/10366059/10366155.pdf?arnumber=10366155

Reference10 articles.

1. Integrated Automation Solution Driving Zero Yield Loss under Reticle Management

2. SMO for 28-nm logic device and beyond: impact of source and mask complexity on lithography performance

3. Optimization from design rules, source and mask, to full chip with a single computational lithography framework: level-set-methods-based inverse lithography technology (ILT)

4. Your worst nightmare: inspection of aggressive OPC on 14nm masks with emphasis on defect sensitivity and wafer defect print predictability

5. Using the AIMS 45-193i for hyper-NA imaging applications

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