High-Performance SiO<tex>$_ x$</tex>Planarized GaInNAs VCSELs-Reference-Cited by-同舟云学术

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High-Performance SiO<tex>$_ x$</tex>Planarized GaInNAs VCSELs

Published:2005-05 Issue:5 Volume:52 Page:1033-1036
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:en
Short-container-title:IEEE Trans. Electron Devices

Author:

Tsai C.-L.,Hu C.-W.,Lee F.-M.,Cheng F.-Y.,Wu M.-C.,Ko S.-C.,Ho W.-J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/30755/01424396.pdf?arnumber=1424396

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cavity-soliton motion in the presence of device defects;Physical Review A;2009-11-10

2. Improved Mode Stability of Long-Wavelength GaInAsN Vertical-Cavity Surface-Emitting Lasers by Using the Selective Ge-Coating Layer;Electrochemical and Solid-State Letters;2009

3. SiO[sub x]-planarized and transistor outlook-packaged oxide-confined vertical-cavity surface-emitting lasers with ring-shape geometry for high-speed (10 Gb∕s) operation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009

4. 1.3-${\rm \mu}\hbox{m}$ GaInAsN Vertical-Cavity Surface-Emitting Lasers by Oxide-Planarized and Surface-Relief Processes for Single-Mode Operation;IEEE Electron Device Letters;2007-02

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