A Review of the types of disturbances and suppression methods for SiC MOSFET driver
Author:
Affiliation:
1. College of Electrical Engineering, Xi'an JiaoTong University,Xi'an,China
Funder
National Key Research and Development Program of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9853204/9853314/09853468.pdf?arnumber=9853468
Reference40 articles.
1. Power Characteristics of A Novel DC-DC Converter with Carrier Phase-Shifted Control
2. Open-Loop Gate Control for Optimizing the Turn-ON Transition of SiC MOSFETs [J];yang;IEEE Journal of Emerging and Selected Topics in Power Electronics,2019
3. A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices
4. Experimental evaluation of switching characteristics, switching losses and snubber design for a full SiC half-bridge powermodule;torsæter;Proc IEEE Int Symp Power Electron Distrib Generation Syst,2016
5. Analysis of oscillation in bridge structure based on GaN devices and ferrite bead suppression method
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