Characterisation and Modelling of 22-nm FD-SOI Transistors Operating at Cryogenic Temperatures-Reference-Cited by-同舟云学术

Characterisation and Modelling of 22-nm FD-SOI Transistors Operating at Cryogenic Temperatures

Published:2022-10-24 Issue: Volume: Page:
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Container-title:2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS)
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Author:

Andrade-Miceli Dennis¹,Power Conor²,Esmailiyan Ali¹,Siriburanon Teerachot²,Bashir Imran³,Asker Mike³,Leipold Dirk³,Staszewski R. Bogdan¹,Blokhina Elena¹

Affiliation:

1. Equal1 Labs Ireland,Dublin,Ireland

2. University College Dublin,Dublin,Ireland

3. Equal1 Labs,San Carlos,CA,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9970762/9970770/09970969.pdf?arnumber=9970969

Reference14 articles.

1. Cryogenic Characterization of 22nm FDSOI CMOS Technology for Quantum Computing ICs

2. Cryogenic Low-Drop-Out Regulators Fully Integrated with Quantum Dot Array in 22-nm FD-SOI CMOS

3. Fully Depleted Silicon on Insulator Devices CMOS. The 28-nm mode is the perfect technology for analog, RF, mmW, and mixed-signal system-on-chip integration;cathelin;IEEE Solid-State Circuits Magazine,0

4. Self-multiplexing force-sense test structures for (MOS) IC applications

5. A Mixed-Signal Control Core for a Fully Integrated Semiconductor Quantum Computer System-on-Chip

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cryo-CMOS Mixed-Signal Circuits for Scalable Quantum Computing: Challenges and Future Steps;2023 IEEE International Symposium on Circuits and Systems (ISCAS);2023-05-21

2. Modelling of Electron Injection and Confinement in Cryogenic 22-nm FD-SOI Quantum Dot Arrays;2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS);2022-10-24