Recombination Center Levels in Gold and Platinum Doped n-Type Silicon for High-Speed Thyristor-Reference-Cited by-同舟云学术

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Recombination Center Levels in Gold and Platinum Doped n-Type Silicon for High-Speed Thyristor

Published:2023-12-28 Issue: Volume:42 Page:85-88
ISSN:
Container-title:2023 2nd Asia Power and Electrical Technology Conference (APET)
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Author:

Yu Nam Chol¹,Chu Kyong Il²,Li Ho Jong³

Affiliation:

1. Kim Chaek University of Technology,Pyongyang,Democratic People's Republic of Korea

2. Haeju KimJongTae University of Education,South Huanghae Province,Democratic People's Republic of Korea

3. GangGen Medical College,North Huanghae Province,Democratic People's Republic of Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10488911/10488919/10488974.pdf?arnumber=10488974

Reference31 articles.

1. High-Power Silicon p-i-n Diode With the Radiation Enhanced Diffusion of Gold

2. Platinum and gold diffusion monitor vacancy profiles induced into silicon wafers by aluminum alloying

3. Two signals in electrically detected magnetic resonance of platinum-doped silicon p–n junctions

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