A Comprehensive Study on the Fabrication of a Three-Dimensional SiC Trench MOSFET with N-P-N Sandwich Epitaxial Layers-Reference-Cited by-同舟云学术

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A Comprehensive Study on the Fabrication of a Three-Dimensional SiC Trench MOSFET with N-P-N Sandwich Epitaxial Layers

Published:2023-12-28 Issue: Volume: Page:466-469
ISSN:
Container-title:2023 2nd Asia Power and Electrical Technology Conference (APET)
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Author:

Yuan Jun¹,Cheng Zhijie²,Guo Fei²,Wang Kuan²,Chen Wei²,Wu Yangyang²,Xin Guoqing¹,Wang Zhiqiang¹

Affiliation:

1. School of Electrical and Electronic Engineering, Huazhong University of Science and Technology,Wuhan,China

2. Hubei Jiufengshan Laboratory,Dept of Integrated Power Systems and Device Technology,Wuhan,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10488911/10488919/10489037.pdf?arnumber=10489037

Reference12 articles.

1. Fundamentals of Power Semiconductor Devices

2. Material science and device physics in SiC technology for high-voltage power devices

3. 4H-SiC Tapered-Gate MOSFET with Low ON-resistance and Hight Current Density

4. Characterization and Implementation of Dual-SiC MOSFET Modules for Future Use in Traction Converters

5. Review of Silicon Carbide Power Devices and Their Applications

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