Investigation for Influence of Parasitic Inductances of Damping Resistors on Suppressing SiC MOSFET Switching Oscillation
Author:
Affiliation:
1. College of Electrical and Information Engineering, Hunan University,Changsha,China
2. CRRC Zhuzhou Electric Locomotive Institute Company Ltd, CRRC Zhuzhou Electric Locomotive Institute Company Ltd
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10394673/10394683/10395512.pdf?arnumber=10395512
Reference20 articles.
1. A Survey of EMI Research in Power Electronics Systems With Wide-Bandgap Semiconductor Devices
2. A Review of Switching Oscillations of Wide Bandgap Semiconductor Devices
3. Performance Evaluation of High-Power SiC MOSFET Modules in Comparison to Si IGBT Modules
4. Review of Silicon Carbide Power Devices and Their Applications
5. The Benefits of SiC mosfets in a T-Type Inverter for Grid-Tie Applications
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