Comparative Analysis on Thermal Performance and Reliability of Discrete SiC MOSFET in Press-Pack Package and Wire-Bonded Package-Reference-Cited by-同舟云学术

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Comparative Analysis on Thermal Performance and Reliability of Discrete SiC MOSFET in Press-Pack Package and Wire-Bonded Package

Published:2023-11-10 Issue: Volume: Page:633-638
ISSN:
Container-title:2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS)
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Author:

Zhu Zheyan¹,Yao Ran¹,Li Hui¹,Lai Wei¹,Chen Zhongyuan²,Li Jinyuan²,Li Yaosheng²,Wang Miaorui³

Affiliation:

1. Chong Qing University,State Key Laboratory of Power Transmission Equipment Technology,Chongqing,China

2. Beijing Institute of Smart Energy,State Key Laboratory of Advanced Power Transmission Technology,Beijing,China

3. State Grid Chongqing Electric Power Research Institute,Chongqing,China

Funder

China Postdoctoral Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10394673/10394683/10395140.pdf?arnumber=10395140

Reference12 articles.

1. An Active Voltage Balancing Method for Series Connection of SiC MOSFETs With Coupling Inductor

2. SiC—Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles

3. Review of Silicon Carbide Power Devices and Their Applications

4. Modeling and Analysis on Overall Fatigue Failure Evolution of Press-Pack IGBT Device

5. A Solution to Press-Pack Packaging of SiC MOSFETS

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