Modeling of memristor-based RF switches-Reference-Cited by-同舟云学术

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Modeling of memristor-based RF switches

Published:2023-06-28 Issue: Volume: Page:
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Container-title:2023 12th International Conference on Modern Circuits and Systems Technologies (MOCAST)
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Author:

Tsipas Evangelos¹,Stavroulakis Emmanouil¹,Chatzipaschalis Ioannis K.¹,Rallis Konstantinos¹,Vasileiadis Nikolaos¹,Dimitrakis Panagiotis²,Kostopoulos Athanasios³,Konstantinidis George³,Sirakoulis Georgios Ch.¹

Affiliation:

1. Democritus University of Thrace,Department of Electrical and Computer Engineering,Xanthi,Greece

2. National Center for Scientific Research "Demokritos",Athens,Greece

3. Foundation for Research & Technology Hellas (FORTH),Microelectronics Research Group (MRG), Institute of Electronic Structure & Laser (IESL),Heraklion,Greece

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10176331/10176367/10177033.pdf?arnumber=10177033

Reference15 articles.

1. SPICE modeling of nonlinear memristive behavior

2. Compact Modeling of Complementary Switching in Oxide-Based ReRAM Devices

3. Probabilistic Resistive Switching Device Modeling Based on Markov Jump Processes

4. Analysis of Memory Matrices with HfO2 Memristors in a PSpice Environment

5. A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel materials and methods for fabricating memristors for use in RF applications;2023 IEEE Nanotechnology Materials and Devices Conference (NMDC);2023-10-22

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