Fin-Height Effect on Poly-Si/PVD-TiN Stacked-Gate FinFET Performance-Reference-Cited by-同舟云学术

Fin-Height Effect on Poly-Si/PVD-TiN Stacked-Gate FinFET Performance

Published:2012-03 Issue:3 Volume:59 Page:647-653
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hayashida Tetsuro,Endo Kazuhiko,Liu Yongxun,O'uchi Shin-Ichi,Matsukawa Takashi,Mizubayashi Wataru,Migita Shinji,Morita Yukinori,Ota Hiroyuki,Hashiguchi Hiroki,Kosemura Daisuke,Kamei Takahiro,Tsukada Junichi,Ishikawa Yuki,Yamauchi Hiromi,Ogura Atsushi,Masahara Meishoku

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6155188/06148269.pdf?arnumber=6148269

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