Transport Physics and Device Modeling of Zinc Oxide Thin-Film Transistors—Part II: Contact Resistance in Short Channel Devices-Reference-Cited by-同舟云学术

Transport Physics and Device Modeling of Zinc Oxide Thin-Film Transistors—Part II: Contact Resistance in Short Channel Devices

Published:2011-09 Issue:9 Volume:58 Page:3025-3033
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Torricelli Fabrizio,Smits Edsger C. P.,Meijboom Juliaan R.,Tripathi Ashutosh K.,Gelinck Gerwin H.,Colalongo Luigi,Kovacs-Vajna Zsolt M.,de Leeuw Dago M.,Cantatore Eugenio

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5993779/05975214.pdf?arnumber=5975214

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