The Shuttle Nanoelectromechanical Nonvolatile Memory-Reference-Cited by-同舟云学术

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The Shuttle Nanoelectromechanical Nonvolatile Memory

Published:2012-04 Issue:4 Volume:59 Page:1137-1143
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Pott Vincent,Chua Geng Li,Vaddi Ramesh,Tsai Julius Ming-Lin,Kim Tony T.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6172314/06135495.pdf?arnumber=6135495

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Digital Nanoelectromechanical Non-Volatile Memory Cell;IEEE Electron Device Letters;2024-04

2. Spectral analysis of the linearized triple-quantum-dot shuttle in the adiabatic regime;Annals of Physics;2023-11

3. Non-Volatile Nano-Electro-Mechanical Switches and Hybrid Circuits in a 16 nm CMOS Back-End-of-Line Process;IEEE Electron Device Letters;2023-01

4. Towards an analytical solution for the triple quantum dot shuttle;Annals of Physics;2022-04

5. A van der Waals Ferroelectric Tunnel Junction for Ultrahigh‐Temperature Operation Memory;Small Methods;2022-02-25

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