Effect of Surface Field on Breakdown for CMOS Single Photon Avalanche Diodes-Reference-Cited by-同舟云学术

Effect of Surface Field on Breakdown for CMOS Single Photon Avalanche Diodes

Published:2023-04-01 Issue: Volume: Page:
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Container-title:SoutheastCon 2023
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Author:

Hasan Sajid¹,Nizam Andalib²,McFarlane Nicole²,Ara Shawkat Mst Shamim¹

Affiliation:

1. Florida International University,Department of Electrical and Computer Engineering,Miami,FL,USA,33174

2. University of Tennessee,Department of Electrical Engineering and Computer Science,Knoxville,TN,USA,37996

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10115054/10114957/10115115.pdf?arnumber=10115115

Reference29 articles.

1. STI-Bounded Single-Photon Avalanche Diode in a Deep-Submicrometer CMOS Technology

2. Effect of surface fields on the breakdown voltage of planar silicon p-n junctions

3. High Signal-to-Noise Ratio Avalanche Photodiodes With Perimeter Field Gate and Active Readout

4. Characterization of Single-Photon Avalanche Diodes in a 0.5 $\mu$m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression

5. Simulations of a new CMOS compatible method to enhance the break-down voltage of highly-doped shallow pn junctions;pauchard;International Conference on Modeling and Simulation of Microsystems,1998

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