Fabrication and electrical characterization of Al-based MIM capacitors
Author:
Affiliation:
1. National Institute of Astrophysics, Optics and Electronics,Electronics Department, Microelectronics Group,Tonantzintla,Mexico
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10209097/10208282/10209141.pdf?arnumber=10209141
Reference9 articles.
1. Accurate modeling of gate tunneling currents in Metal-Insulator-Semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3 and post-metallization annealing
2. Modeling of Conduction Mechanisms in Ultrathin Films of Al2O3 Deposited by ALD
3. Parameter extraction of gate tunneling current in metal–insulator–semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3
4. Physics and applications of the Josephson effect;barone,1997
5. Decoherence in Josephson Phase Qubits from Junction Resonators
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