High-Performance Germanium P-I-N Photodiodes for High-Speed, Hard X-Ray Imaging
Author:
Affiliation:
1. University of California,Department of Electrical and Computer Engineering,Davis,USA
2. National Ignition Facility, Lawrence Livermore National Lab,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10209097/10208282/10209127.pdf?arnumber=10209127
Reference5 articles.
1. Surface Cleaning and Passivation of Epitaxially Grown Germanium;mistyuk;in preparation,0
2. Interlayers on Homoepitaxial n-Ge for Fermi Level Depinning;mistyuk;in preparation,0
3. X-Ray Mass Attenuation Coefficients;hubbell;NIST Standard Reference Database,1994
4. Non-classical scaling approaches for ultra deep sub micron technology
5. p-i-n High-Speed Photodiodes for X-Ray and Infrared Imagers Fabricated by In Situ-Doped APCVD Germanium Homoepitaxy
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