4-Mb MOSFET-selected phase-change memory experimental chip-Reference-Cited by-同舟云学术

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4-Mb MOSFET-selected phase-change memory experimental chip

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Container-title:Proceedings of the 30th European Solid-State Circuits Conference
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Author:

Bedeschi F.,Bez R.,Boffino C.,Bonizzoni E.,Buda E.,Casagrande G.,Costa L.,Ferraro M.,Gastaldi R.,Khouri O.,Ottogalli F.,Pellizzer F.,Pirovano A.,Resta C.,Torelli G.,Tosi M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/9372/29756/01356654.pdf?arnumber=1356654

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis and optimization of read/write reliability for 12F 2 cross-point ultra-fast phase change memory;Semiconductor Science and Technology;2019-10-09

2. A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators;Applied Sciences;2019-02-04

3. A Drift-Tolerant Read/Write Scheme for Multilevel Memristor Memory;IEEE Transactions on Nanotechnology;2017-11

4. A 10 MHz, 42 ppm/ $$ ^{ \circ } {\text{C}} $$ , 69 μW PVT Compensated Latch Based Oscillator in BCD9S Technology for PCM;Communications in Computer and Information Science;2017

5. A Dynamically Reconfigurable Ambipolar Black Phosphorus Memory Device;ACS Nano;2016-11-01

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