Impact of High-Aspect-Ratio Etching Damage on Selective Epitaxial Silicon Growth in 3D NAND Flash Memory-Reference-Cited by-同舟云学术

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Impact of High-Aspect-Ratio Etching Damage on Selective Epitaxial Silicon Growth in 3D NAND Flash Memory

Published:2021-09-01 Issue: Volume: Page:
ISSN:
Container-title:2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS)
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Author:

Reiter Tobias,Klemenschits Xaver,Filipovic Lado

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9560664/9560170/09560693.pdf?arnumber=9560693

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of virtual wafer process modeling and metrology for advanced technology development;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-07-12

2. Post-Etch Yield Killer Defects in 3D NAND High Aspect Ratio Etching Process;2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2023-05-01

3. Machine learning Assists on High Aspect Ratio Slit Trench Etching in 3D NAND;2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2022-05-02

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