Simulation Study of the Breakdown Performance for Vertical GaN PiN Diode with Mesa-terminals and Field-plate Structures-Reference-Cited by-同舟云学术

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Simulation Study of the Breakdown Performance for Vertical GaN PiN Diode with Mesa-terminals and Field-plate Structures

Published:2023-05-26 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference on Communication, Circuits, and Systems (IC3S)
language:
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Author:

Yingcong Xiang¹,Qi Song²,Guanyu Wang³,Lixuan Kang³,Yexi Ren¹,Ruizhao Chen¹

Affiliation:

1. Chongqing University of Posts and Telecommunications,College of Electronic Engineering,Chongqing,China

2. Chongqing University of Posts and Telecommunications,College of Software Engineering,Chongqing,China

3. Chongqing University of Posts and Telecommunications,School of Electronic Engineering,Chongqing,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10169128/10169121/10169829.pdf?arnumber=10169829

Reference9 articles.

1. Application of p-type NiO deposited by magnetron reactive sputtering on GaN vertical diodes

2. Vertical Power p-n Diodes Based on Bulk GaN

3. Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV

4. Parallel breaking characteristics of diode-bridge power electronic switch for DC circuit breaker

5. Conductivity Modulation in Vertical GaN PiN Diode: Evidence and Impact

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