A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology-Reference-Cited by-同舟云学术

A 280 GHz (x8) Frequency Multiplier Chain in 250 nm InP HBT Technology

Published:2022-10-16 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Soylu Utku¹,Alizadeh Amirreza¹,Seo Munkyo²,Rodwell Mark J. W.¹

Affiliation:

1. University of California,Department of Electrical and Computer Engineering,Santa Barbara,USA

2. Sungkyunkwan University,Department of Electrical and Computer Engineering,South Korea

Funder

Semiconductor Research Corporation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051696.pdf?arnumber=10051696

Reference13 articles.

1. A compact H-band Power Amplifier with High Output Power

2. High-power high-efficiency SiGe Ku- and Ka-band balanced frequency doublers

3. InP HBT Technologies for THz Integrated Circuits

4. 220–360-GHz Broadband Frequency Multiplier Chains (x8) in 130-nm BiCMOS Technology

5. A 220-261 GHz Frequency Multiplier Chain (x18) With 8-dBm Peak Output Power in 130-nm SiGe;turkmen;IEEE Microwave and Wireless Components Letters,0

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1. A 272 GHz InP HBT Direct-Conversion Transmitter with 14.1 dBm Output Power;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

2. 280-GHz Frequency Multiplier Chains in 250-nm InP HBT Technology;IEEE Journal of Solid-State Circuits;2023-09

3. Guest Editorial IEEE 2022 BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium;IEEE Journal of Solid-State Circuits;2023-09

4. A 280 GHz InP HBT Direct-Conversion Receiver with 10.8 dB NF;2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2023-06-11