Comparative Study of Uniform Versus Supersteep Retrograde MOSFET Channel Doping and Implications for 6-T SRAM Yield-Reference-Cited by-同舟云学术

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Comparative Study of Uniform Versus Supersteep Retrograde MOSFET Channel Doping and Implications for 6-T SRAM Yield

Published:2013-05 Issue:5 Volume:60 Page:1790-1793
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Damrongplasit Nattapol,Xu Nuo,Takeuchi Hideki,Stephenson Robert J.,Cody Nyles W.,Yiptong Augustin,Huang Xiangyang,Hytha Marek,Mears Robert J.,Liu Tsu-Jae King

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6504760/06492104.pdf?arnumber=6492104

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical performance of 130 nm PD-SOI MOSFET with diamond layout;Microelectronics Journal;2020-05

2. Simulation of low energy ion implantation in silicon;IOP Conference Series: Materials Science and Engineering;2019-04-16

3. Analysis of Drain Current Local Variability of an n-Channel E $\delta$ DC MOSFET Due to RDD Considering Inversion Charge and Correlated Mobility Fluctuations;IEEE Transactions on Electron Devices;2018-04

4. Suppression of threshold voltage variability in MOSFETs by adjustment of ion implantation parameters;Superlattices and Microstructures;2018-01

5. Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance;IEEE Transactions on Nuclear Science;2017-01

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