Characteristics of Planar Junctionless Poly-Si Thin-Film Transistors With Various Channel Thickness-Reference-Cited by-同舟云学术

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Characteristics of Planar Junctionless Poly-Si Thin-Film Transistors With Various Channel Thickness

Published:2013-03 Issue:3 Volume:60 Page:1142-1148
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Lin Horng-Chih,Lin Cheng-I,Lin Zer-Ming,Shie Bo-Shiuan,Huang Tiao-Yuan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6466448/06428639.pdf?arnumber=6428639

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A low-temperature photoresist-based film-profile engineering scheme for fabricating bottom- and double-gated indium–gallium–zinc oxide TFTs;Japanese Journal of Applied Physics;2024-02-14

2. Impacts of Independent Dual-Gate Operation on Reliability of Nanosheet Junctionless Thin-Film Transistor;IEEE Transactions on Electron Devices;2021-12

3. Comparative Analysis & Study of Various Leakage Reduction Techniques for Short Channel Devices in Junctionless Transistors: A Review and Perspective;Silicon;2021-07-03

4. Impacts of Ammonia Gas Plasma Surface Treatment on Polycrystalline-Silicon Junctionless Thin-Film Transistor;IEEE Transactions on Plasma Science;2021-01

5. Effect of transient behavior on off-state current in poly-Si junctionless nanowire thin-film transistor;Japanese Journal of Applied Physics;2020-11-25

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