GaN-Based Planar p-i-n Photodetectors With the Be-Implanted Isolation Ring-Reference-Cited by-同舟云学术

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GaN-Based Planar p-i-n Photodetectors With the Be-Implanted Isolation Ring

Published:2013-03 Issue:3 Volume:60 Page:1178-1182
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hou Jei-Li,Chang Shoou-Jinn,Chen Meng-Chu,Liu C. H.,Hsueh Ting-Jen,Sheu Jinn-Kong,Li Shuguang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6466448/06423883.pdf?arnumber=6423883

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-responsivity photodetectors made of indium selenide with visible to near-infrared photodetection;Chinese Journal of Physics;2024-08

2. Recent advances and prospects for a GaN-based hybrid type ultraviolet photodetector;Semiconductor Science and Technology;2024-06-20

3. Investigation of p-GaN/N-Mg $_{0.3}}$ Zn $_{0.7}}$ O:In Heterojunction Photodiode for Dual-Band UV-B/UV-A Detection;IEEE Transactions on Electron Devices;2021

4. An Ultraviolet Sensor and Indicator Module Based on p–i–n Photodiodes;Sensors;2019-11-13

5. Synthesis and UV detection characteristics of TiO2 thin film prepared through sol gel route;IOP Conference Series: Materials Science and Engineering;2018-10-23

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