Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors-Reference-Cited by-同舟云学术

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Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

Published:2013-03 Issue:3 Volume:60 Page:985-991
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Alarcon Alfonso,Nguyen Viet-Hung,Berrada Salim,Querlioz Damien,Saint-Martin Jérôme,Bournel Arnaud,Dollfus Philippe

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6466448/06463444.pdf?arnumber=6463444

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Klein tunneling degradation and enhanced Fabry-Pérot interference in graphene/h-BN moiré-superlattice devices;2D Materials;2024-02-21

2. Recursive Green’s functions optimized for atomistic modelling of large superlattice-based devices;Journal of Computational Electronics;2023-06-19

3. Reducing Ambipolar Conduction in a Graphene Tunneling Field Effect Transistor (GTFET) via Bandgap Engineering;ECS Journal of Solid State Science and Technology;2021-05-01

4. NDR Behavior of a Phosphorous-Doped Double-Gate MoS2 Armchair Nanoribbon Field Effect Transistor;Journal of Electronic Materials;2019-11-15

5. Modeling of graphene-based field-effect transistors through a 1-D real-space approach;Journal of Computational Electronics;2017-10-03

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