State Dynamics and Modeling of Tantalum Oxide Memristors-Reference-Cited by-同舟云学术

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State Dynamics and Modeling of Tantalum Oxide Memristors

Published:2013-07 Issue:7 Volume:60 Page:2194-2202
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Strachan John Paul,Torrezan Antonio C.,Miao Feng,Pickett Matthew D.,Yang J. Joshua,Yi Wei,Medeiros-Ribeiro Gilberto,Williams R. Stanley

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6542005/06542012.pdf?arnumber=6542012

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