Engineering strained silicon-looking back and into the future-Reference-Cited by-同舟云学术

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Engineering strained silicon-looking back and into the future

Published:2006-07 Issue:4 Volume:25 Page:31-34
ISSN:0278-6648
Container-title:IEEE Potentials
language:
Short-container-title:IEEE Potentials

Author:

Acosta T.,Sood S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Strategy and Management,Education

Link

http://xplorestaging.ieee.org/ielx5/45/34843/01664067.pdf?arnumber=1664067

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonvolatile Ferroelastic Strain from Flexoelectric Internal Bias Engineering;Physical Review Applied;2022-02-04

2. Review on property regulation of semiconducting materials in flexible electronics;Acta Physica Sinica;2021

3. Practical Techniques for Securing the Internet of Things (IoT) Against Side Channel Attacks;Studies in Big Data;2017-08-15

4. Dark-Field Electron Holography for Strain Mapping;Transmission Electron Microscopy in Micro-Nanoelectronics;2013-01-24

5. Parameter Calibrations on MOSFET Stress Sensors;Journal of Electronic Packaging;2012-07-18

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