Reduction of the surface recombination current in InGaAs/InP pseudo-heterojunction bipolar transistors using a thin InP passivation layer-Reference-Cited by-同舟云学术

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Reduction of the surface recombination current in InGaAs/InP pseudo-heterojunction bipolar transistors using a thin InP passivation layer

Published:1989-12 Issue:12 Volume:10 Page:585-587
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tokumitsu E.,Dentai A.G.,Joyner C.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/1651/00043148.pdf?arnumber=43148

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Current Operation in Type-II InP/GaAsSb/InGaAs Double Heterojunction Phototransistors;Applied Science and Convergence Technology;2023-11-10

2. High-speed InP-based heterojunction bipolar transistors;Reference Module in Materials Science and Materials Engineering;2023

3. XPS and HAXPES analyses for pre-sputtered InP surface and InP/Pt interface;Japanese Journal of Applied Physics;2022-03-01

4. Over 450-GHz f_t and f_max InP/InGaAs DHBTs With a Passivation Ledge Fabricated by Utilizing SiN/SiO₂ Sidewall Spacers;IEEE Transactions on Electron Devices;2014-10

5. High-Speed InP-Based Heterojunction Bipolar Transistors;Comprehensive Semiconductor Science and Technology;2011

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