High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper)-Reference-Cited by-同舟云学术

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High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper)

Published:2019-06 Issue: Volume: Page:
ISSN:
Container-title:2019 Device Research Conference (DRC)
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Author:

Then Han Wui,Dasgupta Sansaptak,Radosavljevic Marko,Gardner Sanaz,Sung Seung Hoon,Fischer Paul

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9038149/9046332/09046449.pdf?arnumber=9046449

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved RF power performance of InAlN/GaN HEMT by optimizing rapid thermal annealing process for high-performance low-voltage terminal applications;Chinese Physics B;2023-11-01

2. Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (R_ON xQ_GG) of 3.1 mohm-nC at 40V and f_T/f_MAX of 130/680GHz;2022 International Electron Devices Meeting (IEDM);2022-12-03

3. Advanced Scaling of Enhancement Mode High-K Gallium Nitride-on-300mm-Si(111) Transistor and 3D Layer Transfer GaN-Silicon Finfet CMOS Integration;2021 IEEE International Electron Devices Meeting (IEDM);2021-12-11

4. Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects;Journal of Applied Physics;2021-10-28

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