Negative spin polarization of Mn2VGa Heusler alloy thin film studied in current-perpendicular-to-plane giant magnetoresistance devices
Author:
Affiliation:
1. National Institute for Materials Science (NIMS),Research Center for Magnetic and Spintronic Materials,Tsukuba,Japan,305-0047
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10228191/10228192/10228243.pdf?arnumber=10228243
Reference9 articles.
1. Design Concept of MAS Effect Dominant MAMR Head and Numerical Study
2. Microwave assisted magnetic recording;zhu;IEEE Trans Magn,2008
3. Multiple Spin Injection Into Coupled Field Generation Layers for Low Current Operation of MAMR Heads
4. Search for half-metallic ferrimagnetism in V-based Heusler alloys Mn2VZ (Z = Al, Ga, In, Si, Ge, Sn)
5. Study on FeCr thin film for a spintronic material with negative spin polarization
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