Importance of SAF Stability against Temperature and Magnetic Field in Automotive-Grade-1 STT-MRAM Wafer Electrical Testing-Reference-Cited by-同舟云学术

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Importance of SAF Stability against Temperature and Magnetic Field in Automotive-Grade-1 STT-MRAM Wafer Electrical Testing

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers)
language:
Short-container-title:

Author:

Hindenberg Meike¹,Müller Johannes²,Durner Christoph¹,Gurieva Tatiana¹,Yoon Hongsik²,Titova Aleksandra²,Wolf Georg²,Otani Yuichi²,Wagner-Reetz Maik¹

Affiliation:

1. Fraunhofer Institute for Photonic Microsystems,Dresden,Germany

2. GlobalFoundries,Dresden,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10228191/10228192/10228759.pdf?arnumber=10228759

Reference9 articles.

1. Magnetic switching behavior of each magnetic layer in perpendicular magnetic tunnel junctions

2. Fabrication and Reliability Analysis of Nanoscale Magnetic Tunnel Junctions

3. Thermal and field-rate dependence of multi-step magnetization switching of synthetic antiferromagnetic multilayers

4. Temperature Dependence of Critical Device Parameters in 1 Gb Perpendicular Magnetic Tunnel Junction Arrays for STT-MRAM

5. Magnetic Immunity Guideline for Embedded MRAM Reliability to Realize Mass Production

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