Efficient Spin-Orbit Torque Magnetization Switching with Low Current Density in Crystalline Ferromagnetic Semiconductor-Reference-Cited by-同舟云学术

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Efficient Spin-Orbit Torque Magnetization Switching with Low Current Density in Crystalline Ferromagnetic Semiconductor

Published:2024-05-05 Issue: Volume:476 Page:1-2
ISSN:
Container-title:2024 IEEE International Magnetic Conference - Short papers (INTERMAG Short papers)
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Author:

Lee Kyung Jae¹,Lee Sanghoon¹,Liu Xinyu²,Dobrowolska M.²,Furdyna Jacek K.²

Affiliation:

1. Korea University,Physics Department,Seoul,Republic of Korea,136-701

2. University of Notre Dame,Department of Physics and Astronomy,Notre Dame,IN,USA,46556

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10576737/10576738/10576880.pdf?arnumber=10576880

Reference8 articles.

1. Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection

2. Nature Physics

3. Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As

4. Scientific Reports

5. Spin orbit torque switching of magnetization in the presence of two different orthogonal spin–orbit magnetic fields

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