Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Radiation
Cited by
9 articles.
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1. Investigation of Breakdown and DC Behavior in HBTs With (Al,Ga)As Collector Layer;IEEE Electron Device Letters;2004-10
2. Vertical AlGaAs/GaAs heterojunction bipolar transistors with 106 V breakdown;Solid-State Electronics;2001-05
3. Impact ionization in compound semiconductor devices;Handbook of Advanced Electronic and Photonic Materials and Devices;2001
4. Power flip-chip assembly for space application using HBT in Ku band;GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084)
5. High-voltage HBT technology;GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260)