Band-to-Band Tunneling Diode for Ultralow-Voltage Applications
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/7929292/07907247.pdf?arnumber=7907247
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Superior peak-to-valley current ratio in Esaki diode by utilizing a quantum well;Optical and Quantum Electronics;2023-11-23
2. Vertical Tunneling Field-Effect Transistor With Germanium Source and T-Shaped Silicon Channel for Switching and Biosensing Applications: A Simulation Study;IEEE Transactions on Electron Devices;2022-09
3. A Comparative Analysis of Step Channel TFET with the Impact of Work Function Engineering;Advances in Sustainability Science and Technology;2021-10-20
4. A Novel Slew-Boosting Circuit for Rail-to-Rail Operational Amplifier;Journal of Circuits, Systems and Computers;2020-08-27
5. Utilizing embedded ultra-small Pt nanoparticles as charge trapping layer in flashristor memory cells;Applied Surface Science;2019-02
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3