Investigation on Self-Adjust Conductivity Modulation SOI-LIGBT Structure (SCM-LIGBT) for Monolithic High-Voltage IC-Reference-Cited by-同舟云学术

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Investigation on Self-Adjust Conductivity Modulation SOI-LIGBT Structure (SCM-LIGBT) for Monolithic High-Voltage IC

Published:2017-09 Issue:9 Volume:64 Page:3762-3767
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sun Weifeng^ORCID,Yang Zhuo,Zhu Jing,Bian Fangjuan,Liu Siyang,Chen Jian

Funder

Qing Lan Project

National Nature Science Foundation of China

Natural Science Foundation of Jiangsu Province

Science-Technology Program of Jiangsu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8011577/08000344.pdf?arnumber=8000344

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Low Energy Loss Superjunction LIGBT with Integrated Double Self-Biased MOS;Silicon;2024-08-14

2. A novel 4H–SiC IGBT with double gate PMOS for improving the switch controllability and FBSOA;Microelectronics Journal;2024-05

3. A Float P-Drift and Blocking Junction LIGBT With Low Turn-Off Loss and No-Snapback;IEEE Access;2024

4. Unipolar-Turn-Off Lateral Insulated-Gate Bipolar Transistor With On-Chip Biasing Circuit for Injection Control;IEEE Transactions on Electron Devices;2023-09

5. Influence of Termination Isolation Deep-Oxide Trenches on Short-Circuit Capability in Silicon-On-Insulator Lateral IGBT;IEEE Transactions on Electron Devices;2022-10

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