Fraction of Insertion of the Channel Fin as Performance Booster in Strain-Engineered p-FinFET Devices With Insulator-on-Silicon Substrate
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/8263417/08237186.pdf?arnumber=8237186
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