Towards Realizing the Low-Coercive Field Operation of Sputtered Ferroelectric ScxAl1-xN-Reference-Cited by-同舟云学术

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Towards Realizing the Low-Coercive Field Operation of Sputtered Ferroelectric ScxAl1-xN

Published:2021-06-20 Issue: Volume: Page:
ISSN:
Container-title:2021 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)
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Author:

Gund Ved,Davaji Benyamin,Lee Hyunjea,Casamento Joseph,Xing Huili Grace,Jena Debdeep,Lal Amit

Funder

DARPA

NSF

Cornell Center for Materials Research

MRSEC

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9495312/9495375/09495515.pdf?arnumber=9495515

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-wafer Stress-dependent Leakage Current in Ferroelectric Scandium-doped Aluminum Nitride;2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF);2023-07-23

2. Design and Implementation of an AlScN-Based FeMEMS Multiplier for In-Memory Computing Applications;2023 IEEE International Symposium on Applications of Ferroelectrics (ISAF);2023-07-23

3. Wurtzite and fluorite ferroelectric materials for electronic memory;Nature Nanotechnology;2023-04-27

4. Dawn of nitride ferroelectric semiconductors: from materials to devices;Semiconductor Science and Technology;2023-03-06

5. Ferroelectric nitride semiconductors: Molecular beam epitaxy, properties, and emerging device applications;Semiconductors and Semimetals;2023

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