Localized, degenerately doped epitaxial silicon for temperature compensation of resonant MEMS systems-Reference-Cited by-同舟云学术

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Localized, degenerately doped epitaxial silicon for temperature compensation of resonant MEMS systems

Published:2013-06 Issue: Volume: Page:
ISSN:
Container-title:2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)
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Author:

Ng E. J.,Ahn C. H.,Yang Y.,Hong V. A.,Chiang C.-F.,Ahadi E.,Ward M. W.,Kenny T. W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6599514/6626676/06627294.pdf?arnumber=6627294

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Concepts and Key Technologies of Microelectromechanical Systems Resonators;Micromachines;2022-12-11

2. A Novel Self-Temperature Compensation Method for Mode-Localized Accelerometers;Micromachines;2022-03-13

3. A Mode-Localized Resonant Accelerometer With Self-Temperature Drift Suppression;IEEE Sensors Journal;2020-10-15

4. Analytical Study and Thermal Compensation for Capacitive MEMS Accelerometer With Anti-Spring Structure;Journal of Microelectromechanical Systems;2020-10

5. An Outlook on Potentialities and Limits in Using Epitaxial Polysilicon for MEMS Real-Time Clocks;IEEE Transactions on Industrial Electronics;2020-08

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