Electrical Characteristics of Chalcogenide Doped with Silver as Active Layer in Memristive Devices
Author:
Affiliation:
1. University of Novi Sad,Faculty of Sciences,Department of Physics,Novi Sad,Serbia,21000
2. University of Novi Sad,Faculty of Technical Sciences,Department of Power, Electronic and Telecommunication Engineering,Novi Sad,Serbia,21000
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10315714/10315787/10315930.pdf?arnumber=10315930
Reference14 articles.
1. Exploring Low Power and Ultrafast Memristor on p-Type van der Waals SnS
2. Highly-stable memristive devices with synaptic characteristics based on hydrothermally synthesized MnO2 active layers
3. Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory;ding;Nanoscale Res Lett,2019
4. Coexistence of filamentary and homogeneous resistive switching with memristive and meminductive memory effects in Al/MnO2/SS thin film metal–insulator–metal device
5. Coexistence of Filamentary and Homogeneous Resistive Switching in Fe-Doped SrTiO3 Thin-Film Memristive Devices
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