Temperature Effects on the Sensitivity of Gamma MOSFET Dosimeters-Reference-Cited by-同舟云学术

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Temperature Effects on the Sensitivity of Gamma MOSFET Dosimeters

Published:2023-10-16 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 33rd International Conference on Microelectronics (MIEL)
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Author:

Ruiz-García I.¹,Martín-Holgado P.²,Escobedo P.¹,Morilla Y.²,Palma A. J.¹,Carvajal M. A.¹

Affiliation:

1. Research Centre for Information and Communications Technologies (CITIC-UGR), University of Granada,ECsens,Department Electronics and Computer Technology,Granada,Spain,18071

2. Centro Nacional de Aceleradores (Universidad de Sevilla, CSIC, JA),Sevilla,Spain,E-41092

Funder

Ministerio de Ciencia e Innovación

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10315714/10315787/10315922.pdf?arnumber=10315922

Reference11 articles.

1. Progress of CNA to become the Spanish facility for combined irradiation testing in aerospace

2. 3N163. P-Channel Enhancement-Mode MOSFET Transistors,1994

3. First Chamber in Spain to Irradiate at Low and High Temperature with Gamma, Neutrons and Low-Energy Protons

4. Assessment of a new p-MOSFET usable as a doserate insensitive gamma dose sensor

5. Radiation dose measurment using MOSFETs

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