A new technique for measuring coupling coefficients and 3-D capacitance characterization of floating-gate devices
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/7923/00337446.pdf?arnumber=337446
Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction;Microelectronics Reliability;2018-09
2. Non-linear coupling voltage of split-gate flash memory cells with additional top coupling gate;IET Circuits, Devices & Systems;2012
3. Investigation of Back-Bias Capacitance Coupling Coefficient Measurement Methodology for Floating-Gate Nonvolatile Memory Cells;IEEE Transactions on Electron Devices;2010-06
4. Extraction of the gate capacitance coupling coefficient in floating gate non-volatile memories: Statistical study of the effect of mismatching between floating gate memory and reference transistor in dummy cell extraction methods;Solid-State Electronics;2007-04
5. Novel capacitance coupling coefficient measurement methodology for floating gate nonvolatile memory devices;IEEE Electron Device Letters;2005-07
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