10Gb/s inverter based cascode transimpedance amplifier in 40nm CMOS technology-Reference-Cited by-同舟云学术

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10Gb/s inverter based cascode transimpedance amplifier in 40nm CMOS technology

Published:2013-04 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)
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Author:

Atef M.,Hong Chen ,Zimmermann H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6533795/6549768/06549791.pdf?arnumber=6549791

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of a low-power 180 nm broadband CMOS transimpedance amplifier for bio-medical & IoT applications;International Journal of Information Technology;2023-06

2. An Inductorless Optical Receiver Front-End Employing a High Gain-BW Product Differential Transimpedance Amplifier in 16-nm FinFET Process;IEEE Open Journal of Circuits and Systems;2023

3. A 58-dBΩ 20-Gb/s inverter-based cascode transimpedance amplifier for optical communications;Journal of Semiconductors;2022-01-01

4. A Low-Noise High-Gain Broadband Transformer-Based Inverter-Based Transimpedance Amplifier;IEEE Open Journal of Circuits and Systems;2022

5. An All LTPS-TFT-Based Charge-Integrating Amplifier for Sensor-Array Readout Circuit on Flexible Substrate;IEEE Open Journal of the Solid-State Circuits Society;2022

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