Unbalanced Layout Method for the 4H-SiC JBS Diode Offering Improved Tradeoff between Leakage Current and ON-Resistance-Reference-Cited by-同舟云学术

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Unbalanced Layout Method for the 4H-SiC JBS Diode Offering Improved Tradeoff between Leakage Current and ON-Resistance

Published:2016-08 Issue:8 Volume:37 Page:1045-1047
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Geum Jongmin,Kyoung Sinsu,Sung Man Young^ORCID

Funder

Korea University

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7519045/07499813.pdf?arnumber=7499813

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A SiC sidewall enhanced trench JBS diode with improved forward performance;Semiconductor Science and Technology;2022-05-24

2. Thermal Characteristics Study on 650-V/50-A 4H-SiC JBS Diodes by Convolution Method;2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2022-03-06

3. Huang-Pair: A New High Voltage Diode Concept and Its Demonstration;IEEE Transactions on Power Electronics;2021-08

4. The Design of Quasi-Super Junction and Novel Edge Termination in Junction Barrier Schottky Diode;2019 IEEE 4th International Future Energy Electronics Conference (IFEEC);2019-11

5. Multi-Level Trap Assisted Tunneling Model for the Field and Temperature Dependence of SiC-JBS Reverse Leakage Current;Materials Science Forum;2018-06

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