A Novel SiC Device Model With Power Stage and Gate Driver Uncoupled-Reference-Cited by-同舟云学术

A Novel SiC Device Model With Power Stage and Gate Driver Uncoupled

Published:2023-07 Issue:4 Volume:59 Page:4429-4440
ISSN:0093-9994
Container-title:IEEE Transactions on Industry Applications
language:
Short-container-title:IEEE Trans. on Ind. Applicat.

Author:

Xin Qing¹,Peng Han¹^ORCID,Cheng Zhipeng¹,Chen Jimin¹^ORCID,Yue Qiaozhi¹^ORCID,Tong Qiaoling²^ORCID

Affiliation:

1. State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, China

2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Control and Systems Engineering

Link

http://xplorestaging.ieee.org/ielx7/28/10185984/10081041.pdf?arnumber=10081041

Reference32 articles.

1. High Off-State Impedance Gate Driver of SiC MOSFETs for Crosstalk Voltage Elimination Considering Common-Source Inductance

2. Common source inductance introduced self-turn-on in MOSFET turn-off transient

3. Characterizing the dynamic output capacitance of a MOSFET;young;Semiconductors,2013

4. Modeling and loss analysis of wide bandgap power semiconductor devices;peng,2016

5. Review of Resonant Gate Driver From the Perspective of Driving Energy and Time

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