Characterization of highly doped n- and p-type 6H-SiC piezoresistors-Reference-Cited by-同舟云学术

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Characterization of highly doped n- and p-type 6H-SiC piezoresistors

Published:1998-04 Issue:4 Volume:45 Page:785-790
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Okojie R.S.,Ned A.A.,Kurtz A.D.,Carr W.N.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx3/16/14512/00662776.pdf?arnumber=662776

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