A Turnkey Large-Signal Model for Amplifier Design in 5G Spectra using AlGaN/GaN HEMTs
Author:
Affiliation:
1. Indian Institute of Technology Kanpur,Department of Electrical Engineering,India
2. Indian Space Research Organisation,Micro Electronics Group, Space Applications Centre,Ahmedabad,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9797886/9797892/09798335.pdf?arnumber=9798335
Reference13 articles.
1. A variegated look at 5G in the wild
2. Spatial–Temporal Sensing and Utilization in Full Duplex Spectrum-Heterogeneous Cognitive Radio Networks for the Internet of Things
3. Keysight technologies signal integrity analysis series part 3: The abcs of de-embedding;technologies;Application Note,2014
4. Surface-Potential-Based Compact Modeling of Gate Current in AlGaN/GaN HEMTs
5. A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects
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